* SCT3030AL * SiC NMOSFET model * 650V 70A 30mOhm * Model Generated by ROHM * All Rights Reserved * Commercial Use or Resale Restricted * Date: 2017/03/03 ******************D G S .SUBCKT SCT3030AL 1 2 3 .PARAM T0=25 .FUNC R1(I) {17.94m*I*EXP((TEMP-T0)/196.8)+1.914u*I*ABS(I)**1.526*EXP((TEMP-T0)/950.4)} .FUNC R2(I) {I*(1.0*(1+TANH(I))/2+5.8*(1-TANH(I))/2)} .FUNC V1(V,W) {V-195.0m*ASINH(W/0.1194)*EXP((TEMP-T0)/-344.4)- + 718.5m*ASINH(W/4.314)*EXP((TEMP-T0)/-1992)-19.42m*W*EXP((TEMP-T0)/390.9)} .FUNC V2(V) {2.284p*V**15.14*EXP((TEMP-T0)/33.20*EXP((TEMP-T0)/-1781))} .FUNC V3(V) {884.0*SINH(V/884.0)*EXP((TEMP-T0)/4418)} .FUNC I1(V,W) {V3(V)*(1+2.227*(TANH((V3(V)-26.11)/42.99)+1)*EXP((TEMP-T0)/-179.1)/10)* + W/(ABS(W)+2.227*(TANH((V3(V)-26.11)/42.99)+1)*EXP((TEMP-T0)/-179.1))} .FUNC C1(U,V,W) {(582.4*V+1473*(1-W/1.117)**-0.4415)*(0.1835*TANH((U+7.522)/3.213)+0.8165)} V1 1 11 0 E1 11 12 VALUE={R1(MIN(MAX(I(V1),-1.2k),1.2k))} V2 2 21 0 E2 21 22 VALUE={R2(I(V2))} L1 3 32 5.0n R2 3 32 10 E3 41 0 VALUE={V1(MIN(MAX(V(22,32),0),22),MIN(MAX(V(42),0),800))} E4 42 0 VALUE={V2(MIN(MAX(V(41),0),20))} G1 12 32 VALUE={I1(MIN(MAX(V(42),0),800),V(12,32))} R3 12 32 1T V3 22 23 0 C1 23 12 1p G2 22 12 VALUE={I(V3)*C1(V(22,12),MIN(MAX(V(22,12),0),0.803),MIN(V(22,12),0))} C2 22 32 1.490n R4 22 3 1G ********* ********* ********* ********* ********* ********* ********* ********* ********* ********* ********* .FUNC R11(I) {90.84m*ASINH(I/0.4303)*EXP((TEMP-T0)/268.3)+34.43m*I*EXP((TEMP-T0)/742.5)} .FUNC I11(V) {38.98n*(EXP(V/0.09615/EXP((TEMP-T0)/-277.8))-1)*EXP((TEMP-T0)/-52.29*EXP((TEMP-T0)/800.0))- + 1u*TANH(-V/0.1)*EXP((TEMP-T0)/180.3)-231.9E-21*(EXP(-V/25)-1)*EXP((TEMP-T0)/-200)} .FUNC C11(V,W) {722.2*(V-1.083)+1110*(1-W/2.167)**-0.4987} V11 32 51 0 E11 51 52 VALUE={R11(MIN(MAX(I(V11),-300k),400k))} V12 52 53 0 C11 53 1 1p G11 52 1 VALUE={I11(MIN(MAX(V(52,1),-2k),5))+I(V12)*C11(MAX(V(52,1),1.083),MIN(V(52,1),1.083))} R11 52 1 1T .ENDS SCT3030AL