* SCS210AJHR * SiC Schottky Barrier Diode model * 650V 10A * Model Generated by ROHM * All Rights Reserved * Commercial Use or Resale Restricted * Date: 2015/11/16 *******************A C .SUBCKT SCS210AJHR 1 2 .PARAM T0=25 .FUNC R1(I) {40.09m*I*EXP((TEMP-T0)/209.5)} .FUNC I1(V) {14.90f*(EXP(V/0.02818/EXP((TEMP-T0)/396.1))-1)* + EXP((TEMP-T0)/8.109*EXP((TEMP-T0)/-572.4))} .FUNC I2(V) {28.29f*TANH(V/0.1)*EXP(-V/34.40/EXP((TEMP-T0)/161.1*EXP((TEMP-T0)/600)))* + EXP((TEMP-T0)/7.288*EXP((TEMP-T0)/-600))} V1 1 3 0 E1 3 4 VALUE={R1(MIN(MAX(I(V1),-500k),500k))} V2 4 5 0 C1 5 2 1p G1 4 2 VALUE={I1(MIN(MAX(V(4,2),-5k),5))+I2(MIN(MAX(V(4,2),-5k),5))+ + I(V2)*(655.7*(MAX(V(4,2),0.5454)-0.5454)+ + 506.4*(1-213.8*TANH(MIN(V(4,2),0.5454)/213.8)/1.091)**-0.4996)} R1 4 2 1T .ENDS SCS210AJHR