* SCS220AE2 * SiC Schottky Barrier Diode model * 650V 10A + 10A * Model Generated by ROHM * All Rights Reserved * Commercial Use or Resale Restricted * Date: 2015/11/16 *****************A1 C A2 .SUBCKT SCS220AE2 1 2 3 .PARAM T0=25 .FUNC R1(I) {40.09m*I*EXP((TEMP-T0)/209.5)} .FUNC I1(V) {14.90f*(EXP(V/0.02818/EXP((TEMP-T0)/396.1))-1)* + EXP((TEMP-T0)/8.109*EXP((TEMP-T0)/-572.4))} .FUNC I2(V) {28.29f*TANH(V/0.1)*EXP(-V/34.40/EXP((TEMP-T0)/161.1*EXP((TEMP-T0)/600)))* + EXP((TEMP-T0)/7.288*EXP((TEMP-T0)/-600))} V11 1 13 0 E11 13 14 VALUE={R1(MIN(MAX(I(V11),-500k),500k))} V12 14 15 0 C11 15 2 1p G11 14 2 VALUE={I1(MIN(MAX(V(14,2),-5k),5))+I2(MIN(MAX(V(14,2),-5k),5))+ + I(V12)*(655.7*(MAX(V(14,2),0.5454)-0.5454)+ + 506.4*(1-213.8*TANH(MIN(V(14,2),0.5454)/213.8)/1.091)**-0.4996)} R11 14 2 1T ********* ********* ********* ********* ********* ********* ********* ********* ********* ********* V21 3 23 0 E21 23 24 VALUE={R1(MIN(MAX(I(V21),-500k),500k))} V22 24 25 0 C21 25 2 1p G21 24 2 VALUE={I1(MIN(MAX(V(24,2),-5k),5))+I2(MIN(MAX(V(24,2),-5k),5))+ + I(V22)*(655.7*(MAX(V(24,2),0.5454)-0.5454)+ + 506.4*(1-213.8*TANH(MIN(V(24,2),0.5454)/213.8)/1.091)**-0.4996)} R21 24 2 1T .ENDS SCS220AE2