* SCS210KG_T * SiC Schottky Barrier Diode Self-heating Thermal model * 1200V 10A * Model Generated by ROHM * All Rights Reserved * Commercial Use or Resale Restricted * Date: 2015/11/16 *******************A C Tj Tc Ta .SUBCKT SCS210KG_T 1 2 Tj Tc Ta .PARAM T0=25 T1=-100 T2=600 .FUNC K1(T) {MIN(MAX(T,T1),T2)} .FUNC R1(I,T) {40.48m*I*EXP((T-T0)/155.8)} .FUNC I1(V,T) {2.102f*(EXP(V/0.02760/EXP((T-T0)/405.3))-1)*EXP((T-T0)/7.850*EXP((T-T0)/-601.3))} .FUNC I2(V,T) {TANH(V/0.1)*(710.4p*EXP(-V/198.3)*EXP((T-T0)/54.40)+ + 26.02f*EXP(-V/63.22/EXP((T-T0)/178.9))*EXP((T-T0)/8.493*EXP((T-T0)/-600)))} V1 1 3 0 E1 3 4 VALUE={R1(MIN(MAX(I(V1),-500k),500k),K1(V(Tj)))} V2 4 5 0 C1 5 2 1p G1 4 2 VALUE={I1(MIN(MAX(V(4,2),-5k),5),K1(V(Tj)))+I2(MIN(MAX(V(4,2),-5k),5),K1(V(Tj)))+ + I(V2)*(913.9*(MAX(V(4,2),0.5607)-0.5607)+ + 727.2*(1-360.9*TANH(MIN(V(4,2),0.5607)/360.9)/1.121)**-0.4987)} R1 4 2 1T ********* ********* ********* ********* ********* ********* ********* ********* ********* ********* G101 Ta Tj VALUE={MIN(MAX(IF(TIME>0,I(V1)*V(1,2),0),-1MEG),1MEG)} C101 Tj Ta 3.190m C102 T2 Ta 8.200m C103 T3 Ta 319.6m R101 Tj T2 206.5m R102 T2 T3 627.8m R103 T3 Tc 155.8m .ENDS SCS210KG_T